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Power Semiconductors

Hitachi

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VCES Generation Feature IC Package VCE
(sat)
@25ºC 
(**)		 VF
@25ºC 
(**)		 Status
(*1)
1700V D version High speed
Trench - LiPT		 1200A - 2400A Single 2.3V 1.6V M
600A - 1200A Dual M
1200A Chopper M
900A Dual Diode - 1.6V M
600A Dual
(Direct liquid cool)		 2.5V 2.1V W
E version Low Vce(sat)
Trench - sLiPT		 1200A - 1800A Single 2.0V 1.8V M
600A - 1200A Dual W
F version Softer switching
than E-Version		 3600A Single 2.0V 2.1V W
2500V C version 3rd Gen. 1200A Single 2.9V 2.0V M
E version 4th Gen. 400A Dual TBD TBD W
3300V A version 2nd Gen. 1200A Single Diode - 3.2V M
C version 3rd Gen. 1200A Single 4.1V 2.2V M
800A Chopper M
D version Low switching loss
LiPT		 800A - 1200A Single 3.4V 2.3V M
1200A Single High Isolation M
400A - 800A Chopper M
800A - 1200A Dual Diode - M
E version Low Vce(sat)
HiGT - sLiPT		 800A - 1200A Single 2.7V 2.3V M
800A Chopper - M
E2 version Wide operating temperature
Low Vce(sat)
HiGT - sLiPT		 1000A - 1500A Single 2.5V 2.3V M
500A Dual W
E3 version Softer switching
than E2-version		 1500A Single 2.45V 2.5V M
4500V D version Low switching loss
LiPT		 600A - 900A Single 4.3V 3.6V M
600A - 900A Dual Diode - M
E2 version Wide operating temperature
Low Vce(sat)
HiGT - sLiPT		 800A - 1200A Single TBD TBD W
800A - 1200A Dual Diode - W
E2-H version Wide operating temperature
Low switching loss
HiGT - sLiPT		 800A - 1200A Single 3.1V 3.2V W
800A - 1200A Dual Diode - 4.0V W
6500V E2 version Wide operating temperature
Low Vce(sat)
HiGT - sLiPT		 500A - 750A Single 3.2V 3.6V W
500A - 750A Dual Diode - W
**
Typical
*1
M:Mass production, W:Working sample, D:Discontinued