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Power Semiconductors

Hitachi

Features

  • High thermal fatigue durability
  • High speed and low loss IGBT module
  • Low noise due to soft and fast recovery diode
  • Low driving power due to low input capacitance MOS gate
  • High reliability, high durability module
  • Isolated heatsink between terminals and base

High-Voltage High-Power IGBT

Technology

Technology
Trench Trench Gate
Low VCE(sat)
LiPT Low Injection Punch Through
Low switching loss
sLiPt Soft Low Injection Punch Through
Low noise, lower spike voltage
HiGT High Conductivity IGBT
Low VCE(sat)

Type Numbering System

Type Numbering System