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Hitachi Micro Device & Solution

Hitachi

Process Technology

Performances of SiGe HBTs and their applications
Performances of SiGe
HBTs and their applications
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With a super high frequency and a low-noise SiGe HBTs, our SiGe HBT technologies are utilized to many kinds of product, such as low-noise amplifier ICs for wireless and optical communication, and driver ICs for high-speed IC tester equipments.

  • Process node: 0.25µm or 0.18µm
  • SOI wafer is utilized in 0.25µm technology.
  • A suitable SiGe HBT is selectable from various fT and BVcei performances.
  • Supply voltages of CMOS FETs are 1.8 / 2.5 / 3.3 / 5.0 V.
  • Passive elements: Resistor, MIM capacitor, varactor, inductor, etc.
  • Note: Some impossible combinations of devices are there.

Standard Process

8-type standard technologies of SiGe BiCMOS are available as shown below.

Standard Process Table
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Process customization

We can customize our standard SiGe BiCMOS technologies to suit customers' needs.

Process customization

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