Flexible production can be supported as an Integrated device manufacturer.
| Technology | Device | fT | Voltage | Wafer | Status |
|---|---|---|---|---|---|
| 0.35µm | Si BiCMOS | 20GHz | 3.3V | SOI | MP |
| 13GHz | 7V | ||||
| 0.25µm | SiGe BiCMOS | 15GHz | 10V | SOI | MP |
| 65GHz | 3.5V | ||||
| 90GHz | 2.5V | ||||
| 137GHz | 2.0V | ||||
| 0.18µm | SiGe BiCMOS | 137GHz | 2.0V | Bulk | MP |
| 210GHz | 1.5V | ||||
| 300GHz | T.B.D | UD |
SOI : Silicon On Insulator , MP : Mass Production , UD : Under Development
| Products | Function, Applications | Features | Device |
|---|---|---|---|
| Mux IC (39.8Gbps - 43Gbps) Dmux IC (39.8Gbps - 43Gbps) |
2.5Gbps x 16ch ⇔ 40Gbps |
On chip VCO |
15GHz- 210GHz Low noise SiGeBiCMOS |
| 1chip Mux/Dmux IC (10Gbps) | 640Mbps x 16ch ⇔ 10Gbps |
1chip integration | |
| Transimpedance AMP | Opt-Electric Transform | >9.5GHz | |
| High speed Gain AMP | Opt-Electric Transform | 9GHz 30dB ∼ -6dB |
|
| High speed Pin electronics AMP | Semiconductor measurement equipment | Low noise High voltage |
|
| High precision DAC | Reference voltage | Multi channel | Low noise BiCMOS |
| Sensor IF AMP (X-ray detect) | Medical Inspection equipments | Low noise | |
| Sensor IF AMP (Electrical Magnetic force detect) |
Storage system | Low noise |
1. Custom IC Development flow
Hitachi provides cordial service to satisfy
the customer's demand. 
2. Support System
Hitachi supports customer in every
aspect of IC development.
1) LSI package analysis
2) LSI device analysis
• Analysis of fault detection
• Analysis of ultra-thin layer structure
• Analysis of surface chemical bond
3) FIB (*) metal correction
4) Local area grinder to expose the defect
layer
(*)FIB:Focused Ion Beam
